GaN is, without doubt, the most important and pervasive material within the family of compound semiconductors. It’s initially enjoyed tremendous success within the optoelectronics domain, where it’s ...

Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...

Gallium nitride (GaN) is breaking out in the world of power electronics. GaN stands out for its superior physical properties, including high electron mobility, wide bandgap, and high thermal ...

Gallium nitride (GaN) and its wide bandgap cousin silicon carbide (SiC) have started to disrupt power electronics. Ironically, just a few years ago, GaN was considered useless as a semiconductor, ...

Researchers at MIT and collaborating institutions have developed a new fabrication process that integrates high-performance gallium nitride (GaN) transistors onto standard silicon CMOS chips. This ...

A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data sheet is a half-bridge application circuit (figure 28, right, slightly ...

As silicon reaches its theoretical performance limits for power electronics, the industry is shifting toward wide-bandgap (WBG) materials, including gallium nitride. Why WBG, and why GaN specifically?

A research team led by Prof. Kevin Chen of Department of Electronic and Computer Engineering at The Hong Kong University of Science and Technology (HKUST) has recently inducted a new member, the ...