Using a single microcontroller port to drive a multi-digit LED display to help engineers with those last-minute design ...

Abstract: This paper highlights some of the challenges faced in the modeling of MOSFET devices operating at cryogenic temperature (CT). It will review the most important phenomena, including the ...

For IGBTs, the on-state voltage drop is a critical specification to consider. This drop includes both the diode drop across ...

Abstract: A silicon carbide (SiC) trench MOSFET featuring an adjustable P-region potential (AP-TMOS) is proposed and investigated to improve high frequency and short-circuit performance in this ...